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2012
Book Article
Title

Physical and mathematical fundamentals

Abstract
This chapter provides a short overview on the basics of CMOS transistor modeling with respect to deep submicron requirements and mathematical approaches to analyze variations in the design process. Technical terms are going to be defined and explained; physical processes and mathematical theories will be illustrated.
Author(s)
Lemaitre, Bernd
MunEDA GmbH Munich
Sohrmann, Christoph  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Muche, Lutz
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Haase, Joachim
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Mainwork
Process variations and probabilistic integrated circuit design  
DOI
10.1007/978-1-4419-6621-6_2
Language
English
Fraunhofer-Institut für Integrierte Schaltungen IIS  
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