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  4. Model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field
 
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2011
Journal Article
Title

Model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field

Abstract
Low-temperature model experiments and 3D, time-dependent flow simulations with relevance to the melt motion during directional solidification of multicrystalline silicon under a traveling magnetic field are presented. The influence of the inductor current, the relative inductormelt position, and the melt height on the flow pattern and velocity is studied in a square shaped GaInSn melt. Numerical simulations show a good agreement with measurements of the flow velocity by the ultrasonic Doppler velocimetry method. The toroidal flow structure already known from cylindrical melts is observed for a large parameter range. However, at small melt heights, the 3D melt geometry leads to a new flow pattern with a central horizontal vortex. The results obtained from the model experiments are transferred to silicon solidification processes using the proposed scaling laws.
Author(s)
Dadzis, K.
Ehrig, J.
Niemietz, K.
Pätzold, O.
Wunderwald, U.  
Friedrich, J.  
Journal
Journal of Crystal Growth  
DOI
10.1016/j.jcrysgro.2011.08.009
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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