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  4. Nitrogen implanted etch-stop layers in silicon
 
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1995
  • Zeitschriftenaufsatz

Titel

Nitrogen implanted etch-stop layers in silicon

Abstract
The aim of this work is to investigate the possibility to produce an etch-stop layer in silicon through nitrogen ion implantation. The etching process is influenced by nitrogen concentrations in silicon above 1*120cm-3. Under the experimental conditions the observed step height between the implanted region and the unimplanted one did not exceed 1.8 mym.
Author(s)
Paneva, R.
Temmel, G.
Ryssel, H.
Burte, E.P.
Zeitschrift
Microelectronic engineering
Konferenz
Micro- and Nano-Engineering 1994
Thumbnail Image
DOI
10.1016/0167-9317(94)00155-N
Language
Englisch
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Tags
  • anisotropes Ätzen

  • anisotropicetching

  • Ätzstop

  • etch stop

  • microstrukturing

  • Mikrostrukturierung

  • nitrogen implantation...

  • silicon

  • Silizium

  • SOI

  • Stickstoffimplantatio...

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