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  4. Broadband GaN-based power amplifier MMIC and module for V-band measurement applications
 
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2018
Conference Paper
Title

Broadband GaN-based power amplifier MMIC and module for V-band measurement applications

Abstract
This work presents a balanced GaN-based power amplifier targeting the entire V-band frequency range. The fabricated chip was packaged in a split block WR-15 waveguide environment to make it applicable for high-power measurement applications. The designed GaN MMIC provides a high small signal gain of more than 20 dB within a frequency range of 49 GHz up to 83 GHz. On-wafer large-signal measurements of the MMIC at 75 GHz demonstrate a linear gain of 26.3 dB, along with a saturated output power of 29.3 dBm (850 mW) and a maximum power added efficiency of 13.5 %. For the assembled module, an average saturated output power of 28.1 dBm (645 mW) within a variance of ±0.4 dB has been measured for the entire V-band (50-75 GHz).
Author(s)
Schwantuschke, Dirk  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brueckner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Amirpour, Raul
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tessmann, Axel  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kuri, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rießle, Markus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
13th European Microwave Integrated Circuits Conference, EuMIC 2018. Proceedings  
Conference
European Microwave Integrated Circuits Conference (EuMIC) 2018  
DOI
10.23919/EuMIC.2018.8539940
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • V-band power amplifier

  • power amplifier module

  • monolithic microwave integrated circuit (MMIC)

  • aluminum gallium nitride

  • gallium nitride

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