Study on laser parameters for silicon solar cells with LCP selective emitters

In this paper Laser Chemical Processing (LCP) is used for high local doping of selective emitters. In order to find influencing laser parameters on LCP selective emitters, high-efficiency Si solar cells with size of 2x2 cm2 cells were processed. The highly doped emitters were processed with different laser powers to see the influence on grooving form and pulse energies. In order to find out if there is a contact resistance problem because of an isolating PSG layer, solar cells with and without PSG etch after the LCP selective emitter formation were compared. Laser induced damage is investigated for low and high pulse energies with TEM. This shows no dislocations for low laser power and small regions of dislocations for high laser power.