Fabrication of n-Type doped v-shaped structures on (100) diamond

Herein, a technological process for the fabrication of n-type doped V-shaped structures on (100) single-crystalline diamond substrates, designed to overcome the limitations of n-type doping on (100) surfaces, is presented. This doping enhancement process can be applied to realize electronic power devices such as a junction barrier Schottky diode or junction field effect transistors with low on-resistance. Herein, a catalytic etching process is performed by using square-shaped nickel masks on the diamond surface and annealing in a hydrogen atmosphere, resulting in the formation of inverted pyramidal structures with flat{111} sidewalls. The resulting V-shaped structures are subsequently overgrown with phosphorus-doped diamond to achieve n-type doped facets with higher doping concentrations. Cathodoluminescence studies reveal the predominant incorporation of phosphorus donors on the {111} sidewalls of V-shaped structures.