Thermo-mechanical characterization and modeling of TSV annealing behavior

This paper focuses on the characterization and Finite Element (FE) simulation of thermo-mechanical loads in Through Silicon Vias (TSVs), which emerge due to the annealing process after electro chemical deposition (ECD) of copper. For this purpose a FE-model has been implemented, which calculates the stress state of TSV structures after annealing. To validate the model, measurements using -Raman spectroscopy (RS) were carried out. Results from Finite Element Modeling (FEM) were converted into their corresponding Raman-Shifts to make it comparable to RS measurements. Additionally warpage and copper protrusion were measured to receive a complete picture of the occurring mechanisms and boundary conditions.