Light dependence of partially depleted SOI-MOSFET's unsing SIMOX substrates

The optical dependence of partially depleted MOS-FET's on SIMOX substrates is investigated. Measurements of the electrical and optical characteristics are presented. In order to make use of the threshold voltage shift due to optical generation of carriers in the film a comparator circuit was realized, which can be switched by a light pulse. Possible applications can be found in the optically coupled signal transmission in the lower frequency range for intelligent power devices.