Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell

We investigated the electrical characteristics of tunnel oxide passivated contact (TOPCon) solar cells fabricated by ion implantation using a beam line ion implantation (beam line) system and a plasma immersion ion implantation (PIII) system. The sheet resistance and surface passivation quality were almost comparable for the TOPCon structures fabricated using the both implantation systems. An excellent implied open circuit voltage exceeding 745 mV demonstrated the high quality surface passivation. In addition, almost similar conversion efficiencies of 20.5 % and 20.1 % were obtained for the solar cells fabricated using the beam line system and the PIII system, respectively.