Relating mym-wave mapped data to physical parameters for MODFETs.

Modulation doped Alsub0.2Gasub0.8As/Insub0.3Gasub0.7As high electron mobility transistors (HEMT) were statistically characterized at my-wave frequencies. The results provided information to optimize transistor fabrication technology and as well to investigate transistor reliability and reproducibility to allow the design of multi stage low noise amplifiers (LNAs).