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  4. Deep random forest with ferroelectric analog content addressable memory
 
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2024
Journal Article
Title

Deep random forest with ferroelectric analog content addressable memory

Abstract
Deep random forest (DRF), which combines deep learning and random forest, exhibits comparable accuracy, interpretability, low memory and computational overhead to deep neural networks (DNNs) in edge intelligence tasks. However, efficient DRF accelerator is lagging behind its DNN counterparts. The key to DRF acceleration lies in realizing the branch-split operation at decision nodes. In this work, we propose implementing DRF through associative searches realized with ferroelectric analog content addressable memory (ACAM). Utilizing only two ferroelectric field effect transistors (FeFETs), the ultra-compact ACAM cell performs energy-efficient branch-split operations by storing decision boundaries as analog polarization states in FeFETs. The DRF accelerator architecture and its model mapping to ACAM arrays are presented. The functionality, characteristics, and scalability of the FeFET ACAM DRF and its robustness against FeFET device non-idealities are validated in experiments and simulations. Evaluations show that the FeFET ACAM DRF accelerator achieves ~106 ×/10× and ~106 ×/2.5× improvements in energy and latency, respectively, compared to other DRF hardware implementations on state-of-the-art CPU/ReRAM.
Author(s)
Yin, Xunzhao
Müller, Franz  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Laguna, Ann Franchesca Balon
Li, Chao
Huang, Qingrong
Shi, Zhiguo
Lederer, Maximilian
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Laleni, Nelli
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Deng, Shan
Zhao, Zijian
Imani, Mohsen
Shi, Yiyu
Niemier, Michael Thaddeus
Hu, Xiaobo Sharon
Zhuo, Cheng
Kämpfe, Thomas  orcid-logo
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Ni, Kai
Journal
Science advances
Open Access
DOI
10.1126/sciadv.adk8471
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Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
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