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  4. Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells
 
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2013
Conference Paper
Title

Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells

Abstract
Electroluminescence measured at different injection current densities is used to study the effect of particle irradiation on GaInP/GaInAs/Ge triple-junction solar cells. By employing the optoelectronic reciprocity relation, the irradiation-induced degradation in the J-V characteristics of all individual subcells and their underlying diode saturation parameters is derived. Also, the dependence of the solar cell irradiation response on the position of the irradiation-induced non-radiative recombination centers within the cell active region, i.e., the quasi-neutral regions and the space charge region, is discussed.
Author(s)
Hoheisel, Raymond
Dimroth, Frank  
Bett, Andreas W.  
Messenger, S.R.
Jenkins, P.P.
Walters, Robert J.
Mainwork
22nd Space Photovoltaic Research and Technology (SPRAT) Conference 2011. Selected publications  
Conference
Space Photovoltaic Research and Technology Conference (SPRAT) 2011  
DOI
10.1016/j.solmat.2012.06.015
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Materialien - Solarzellen und Technologie

  • III-V und Konzentrator-Photovoltaik

  • Alternative Photovoltaik-Technologien

  • III-V Epitaxie und Solarzellen

  • Solarzellen und Bauelemente

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