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  4. Low temperature metal interdiffusion bonding for micro devices
 
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2012
Conference Paper
Title

Low temperature metal interdiffusion bonding for micro devices

Abstract
We demonstrate solid liquid interdiffusion bonding by gallium and gold as bonding material and show the bonding at 40°C. Because of the low melting point of gallium of 29.8°C several difficulties for processing the gallium exists. We could successful develop deposition, structuring and bonding processes.
Author(s)
Frömel, J.
Lin, Y.
Wiemer, Maik  
Geßner, Thomas  
Esashi, M.
Mainwork
3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012  
Conference
International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2012  
DOI
10.1109/LTB-3D.2012.6238080
Language
English
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
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