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2025
Journal Article
Title
Elucidating the efficiency limit of silicon-based monolithic tandem cells through the combination of Auger and Shockley-Queisser limits
Abstract
Accurate theoretical efficiency limits are critical for diagnosing loss mechanisms and guiding optimization in solar cell technologies. While the Shockley-Queisser (SQ) limit remains the most widely used framework for assessing tandem and multijunction devices, its assumptions - purely radiative recombination and ideal light absorption - do not account for the intrinsic limitations of silicon (Si), the dominant photovoltaic material. In particular, Si's indirect bandgap resulting in Auger recombination imposes a lower efficiency ceiling. In this work, we present a rigorous simulation approach that combines SQ-limited top cells with an Auger-limited Si bottom cell, accounting also for luminescent coupling (LC). This hybrid modeling approach yields a maximum theoretical efficiency of 43.2% for an ideal two-terminal Si-based tandem device, compared to 45.2% using the unrealistic assumption of a SQ-limited Si bottom cell. The optimal configuration features a top cell bandgap of 1.71 eV and a 300 μm-thick Si bottom cell, with a minor efficiency penalty of only 0.1% for a more typical thickness of 120 μm. Accounting for LC values typical for perovskite top cells reduces the optimum efficiency to 42.4%. Special emphasis is placed on the interpretation of fill factor (FF), highlighting the need for correct analytical FF limit (FF0) calculations using an appropriate ideality factor, which is 5/3 for silicon based tandem at the theoretical limit. To support future benchmarking, we provide lookup tables of current–voltage (JV) parameters for a range of top cell bandgaps, bottom cell properties, multijunction stacks with up to six subcells, and perovskite-specific top cell properties. These results offer reliable efficiency limits for the evaluation of high-efficiency silicon-based tandem and multijunction solar cells.
Author(s)
Open Access
File(s)
Rights
CC BY 4.0: Creative Commons Attribution
Additional link
Language
English