2013
Conference Paper
Title

32 µW pulsed terahertz emission from high mobility InAlAs/InGaAs multi-nanolayer structures

Abstract
We measured pulsed THz emission from high-mobility MBE grown InGaAs/InAlAs multi-nanolayer structures. The detected average THz power was 32 W at 32 mW optical excitation power. The bandwidth of the THz pulses exceeds 4 THz. OCIS codes: (300.6495) Spectroscopy, terahertz; (160.5140) Photoconductive materials.
Author(s)
Dietz, R.J.B.
Globisch, B.
Gerhard, M.
Stanze, D.
Koch, M.
Sartorius, B.
Göbel, T.
Schell, M.
Mainwork
Conference
DOI
Language
English