High-Speed Waveguide Integrated Avalanche Photodiode for InP-PICs

We present a waveguide integrated avalanche photodiode for high-speed operation. Its sophisticated structure comprising a fully undepleted absorber and an additional drift-layer, reducing the transit time significantly. The device shows high external responsivity of 0.61 A/W at unity gain for a wavelength of 1550 nm, while the bandwidth is up to 37 GHz at a gain of M=1.5.