1999
Journal Article
Title

Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS

Abstract
The regrowth behaviour of and dopant diffusion in (Ga)In(As)P:Fe layers selectively deposited by metalorganic MBE was assessed. Device quality regrowth and the absence of lateral diffusion and accumulation effects is demonstrated as an essential feature for the fabrication of InP-based optoelectronic devices.
Author(s)
Harde, P.
Gibis, R.
Kaiser, R.
Kizuki, H.
Kunzel, H.
Journal
Conference
DOI
Language
English
Keyword(s)