Contactless mapping of mesoscopic resistivity variations in semi-insulating substrates
Kontaktlose Messung vom mesoskopischen Widerstandsvariationen in semiisolierenden Substraten
The lateral homogeneity of the electrical resistivity p of semi-insulating GaAs substrates is measured with high resolution using contactless capacitive mapping. The improved technique is capable of imaging mesoscopic p fluctuations correlated with the cellular structure of the dislocation density. The results compare favorably with data obtained by point contact topography. A rneasurement and statistical analysis procedure is described that allows an individual evaluation of the macro- and mesocopic contributions to the total on-wafer p variation.