A 1.8 GHz low-noise amplifier in CMOS/SIMOX technology

A low-voltage low-noise amplifier fabricated in a CMOS/SIMOX technology is presented in this contribution. Due to the dielectric insulation of transistors, high resistive substrates can be used. This also allows the integration of inductors and capacitors with quality factors suitable for the design of RF communication circuits. The center frequency of the presented amplifier is 1.8 GHz. Operating at 2 V supply voltage the power gain is 16 dB, with a noise figure of 3.3 dB and the 1 dB compression point related to the output of 5 dBm. The power dissipation under these conditions amounts to 24 mW.