High sensitive UV-enhanced linear CMOS photosensor

This contribution describes a highly sensitive UVenhanced linear CMOS photosensor which exhibits very low noise. The sensor features on-chip readout and control electronics, global synchronous shutter, programmable spectral responsivity, clock-independent variable integration time, two different acquisition modes, selectable region-of-interest readout, and a binning capability. The device has been designed and fabricated in the 0.5?m standard CMOS process available at the Fraunhofer IMS.