• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Optical and mass spectrometric investigation of the interaction of hydrogen with nitrogen In (In)GaAsN layers
 
  • Details
  • Full
Options
2009
Conference Paper
Title

Optical and mass spectrometric investigation of the interaction of hydrogen with nitrogen In (In)GaAsN layers

Other Title
Optische und massenspektrometrische Untersuchungen der Wechselwirkung von Wasserstoff mit Stickstoff in (In)GaAsN-Schichten
Abstract
Fourier transform infrared absorption spectroscopy and secondary ion mass spectroscopy have been carried out on GaAs based dilute nitride layers after treatment with H(+) or D(+) ions. Formation of N-H (D-H) centers is detected by vibrational absorption bands of H (D). The modes are assigned to two different complexes, each involving one H (D) atom. A major fraction of the hydrogen in the layers might be not or only loosely bound to nitrogen.
Author(s)
Alt, H.C.
Messerer, P.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Riechert, H.
Kirste, Lutz  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Physics of Semiconductors. 29th International Conference on the Physics of Semiconductors, ICPS 2008  
Conference
International Conference on the Physics of Semiconductors (ICPS) 2008  
DOI
10.1063/1.3295567
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • III-V Halbleiter

  • III-V semiconductor

  • Heterostruktur

  • heterostructure

  • optische Eigenschaft

  • optical property

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024