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  4. Epitaxially grown crystalline silicon thin-film solar cells reaching 16.5% efficiency with basic cell process
 
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2011
Journal Article
Title

Epitaxially grown crystalline silicon thin-film solar cells reaching 16.5% efficiency with basic cell process

Abstract
We report about the current performance of crystalline silicon thin-film (cSiTF) solar cells that are a very attractive alternative to conventional wafer-based silicon solar cells if sufficiently high cell efficiencies are achieved at acceptable cost of production. Applying a standard cell process (diffused POCl3 emitter, front contacts by photolithography, no surface texture) to thin-films deposited with a lab-type reactor, specifically designed for high-throughput photovoltaic applications, on highly-doped Cz substrates we routinely obtain efficiencies above 16%. On 1 Omega cm FZ material substrates we reach efficiencies up to 18.0%, which is among the highest thin-film efficiencies ever reported. Additionally, a comparison to microelectronic-grade epitaxially grown cSiTF material underlines the excellent electrical quality of the epitaxial layers deposited.
Author(s)
Rosenits, Philipp
Kopp, F.
Reber, Stefan
Journal
Thin solid films  
DOI
10.1016/j.tsf.2010.12.150
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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