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  4. Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
 
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1992
Conference Paper
Title

Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers

Other Title
Einfluss der Spiegelreflektivität auf den differentiellen Gewinn und K-Faktor in Hochgeschwindigkeits-GaAs/AlGaAs und InGaAs/GaAs -MQW- Lasern
Abstract
The intrinsic modulation response of semiconductor lasers is dependent on the differential gain, which determines the relaxation frequency for a given current density, and the damping factor, K, which limits the ultimate 3-dB bandwidth. We investigated the dependence of both parameters in GaAs/AlGaAs and pseudomorphic InsubyGasub1minusyAs/GaAs multiple-quantum-well lasers on the threshold gain by measuring the relative intensity noise power spectra of lasers with different facet reflectivities and cavity lengths.
Author(s)
Weisser, S.
Esquivias, I.
Ralston, J.D.
Rosenzweig, Josef  
Schönfelder, A.
Larkins, E.C.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
International Electron Devices Meeting '92. Technical Digest  
Conference
International Electron Devices Meeting 1992  
DOI
10.1109/IEDM.1992.307493
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • dielectric mirror coating

  • dielektrische Spiegelbeschichtung

  • Halbleiterlaserdiode

  • high-frequency direct modulation

  • Hochfrequenzdirektmodulation

  • quantum well lasers

  • relative intensity noise

  • relatives Intensitätsrauschen

  • semiconductor laser

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