Temperature dependent Dielectric Characterization of Low Loss Thin Film Polymer up to sub-THz bands

In this work, the dielectric properties of thin film materials are extracted up to sub-THz bands. Fabry-Pérot open resonator is used to extract non-metallized dielectric properties from cured standalone 60 μm Ajinomoto Build-up Film® (ABF) up to 140 GHz. Microstrip fork-coupled resonators are used to extract dielectric properties of ABF after fabrication processes such as curing, lamination, metallization, and etching. The fork resonators are modeled, fabricated and measured on 60 μm ABF film. Very good correlation is obtained between measurement and simulation results. Third order resonators are used to extract material properties above 110 GHz. Temperature dependent dielectric properties were extracted at 28 GHz and 140 GHz. The extracted dielectric properties show stable performance over a large frequency range at temperatures up to at least 100 °C making it suitable material for wide range of applications.