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  4. Light dependence of partially depleted SOI-MOSFETs using SIMOX substrates
 
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1995
Journal Article
Title

Light dependence of partially depleted SOI-MOSFETs using SIMOX substrates

Abstract
The optical dependence of partially depleted MOSFET's on SIMOX substrates is investigated. Measurements of the electrical and optical characteristics are presented. In order to make use of the threshold voltage shift due to optical generation of carriers in the fiim a comparator circuit was realized, which can be switched by a light pulse. Possible applications can be found in the optically coupled signal transmission in the lower frequency range for intelligent power devices.
Author(s)
Werner, R.
Zimmermann, C.
Kalz, A.
Journal
IEEE transactions on electron devices  
DOI
10.1109/16.405280
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • lichtempfindliches Bauelement

  • MOSFET

  • optical absorption

  • optoelektronisches Bauelement

  • photo transistor

  • phototransistor

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