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Numerical modelling of double-injection Si - In devices
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1986
Journal Article
Title
Numerical modelling of double-injection Si - In devices
Author(s)
Hurm, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Hornung, J.C.R.
Manck, O.
Journal
Journal of applied physics
DOI
10.1063/1.337740
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Keyword(s)
indium-dotiertes Silizium
Ladungsträgerinjektion
Numerik
