Narrow-band photoreceiver at 10 GHz with a flip-chip mounted 1.55 µm waveguide photodiode

Narrow-band photoreceivers at 10 GHz were manufactured using GaAs-based pseudomorphic HEMT (pHEMT) amplifiers. The photoreceiver includes flip-chip mounted side illuminated multimode waveguide photodiode for 1.55 µm on InP substrate. Using the waveguide photodiode which has high responsivity and low junction capacitance, high gain and low noise of the photoreceivers have been achieved.