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  4. Changes of MQW photoluminescence under alpha particle irradiation
 
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2001
Journal Article
Title

Changes of MQW photoluminescence under alpha particle irradiation

Other Title
Änderung der MQW-Photolumineszenz durch Alpha-Teilchen-Bestrahlung
Abstract
Undoped multiple quantum well (MQW) samples grown by the molecular beam epitaxy method were irradiated by 5.15 MeV energy alpha particles. A strong influence of irradiation on the photoluminescence (PL) intensity was observed in these nearly intrinsic samples: the PL intensity at liquid nitrogen and room temperatures decreased by more than two orders of magnitude at alpha particle fluence of 10(exp 11) cm(exp -2). The dependence of the PL intensity on irradiation dose is described by a rate equation model that takes into account the generation of nonradiative point centers in barriers and wells of the MQW structure during irradiation.
Author(s)
Kundrotas, J.
Dargys, A.
Valusis, G.
Asmontas, S.
Granja, C.
Pospisil, S.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Superlattices and Microstructures  
DOI
10.1006/spmi.2000.0971
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • alpha particle

  • luminescence

  • multiple quantum wells

  • radiation detector

  • III-V semiconductor

  • III-V Halbleiter

  • Quantenfilm

  • photoluminescence

  • Photolumineszenz

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