Design and analysis of a 34 dBm Ka-band GaN high power amplifier MMIC
Entwurf und Analyse eines 34 dBm Ka-Band GaN Hochleistungsverstärker MMICs
This paper presents the design and analysis issues related to the use of recent GaN technologies for realizing high power millimeter wave MMICs. Two GaN Ka-band amplifier MMICs have been designed, fabricated and characterized. The small-signal and power measurement results are presented for both amplifiers, with an excellent output power of 34.1 dBm at 27 GHz for the 2-stage power amplifier MMIC. Both MMICs have a very good yield and performance, even more so in regard of the current state-of-the-art. The observed deviations between the original simulation and measurements have been explained by extensive use of 3D EM simulations of the coplanar passive structures.