1992
Journal Article
Title

Integrated wavelength demultiplexer-receiver on InP

Abstract
A detector stage comprising a photodiode, a field-effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips were mounted into complete modules and operated in a 1.3 mu m/1.55 mu m bidirectional transmission link. At 576 Mbit/s and 10-9 bit error rate the sensitivity of the module was -21 dBm, while the intrinsic sensitivity of the receiver was determined to be -21 dBm.
Author(s)
Bornholdt, C.
Trommer, D.
Unterborsch, G.
Bach, H.G.
Kappe, F.
Passenberg, W.
Rehbein, W.
Reier, F.
Schramm, C.
Stenzel, R.
Umbach, A.
Venghaus, H.
Weinert, C.M.
Journal
DOI
Language
English
Keyword(s)