Multi-Channel AlScN/GaN RF HEMTs Grown by Metal-Organic Chemical Vapor Deposition

We demonstrate multi-channel AlScN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD). The five-channel structure exhibits a high electron mobility (μ) of 1030 cm2/V·s together with a high carrier concentration (ns) of 3.58×1013 cm-2. Devices with a gate length (Lg) of 95 nm and a total gate width (Wg) of 2×15 μm were fabricated using a tri-gate architecture with varying fin widths. The 300 nm fin width device achieves a current densities of 4.2 A/mm with improved linearity, while reducing the fin width to 75 nm enhances electrostatic control over all channels and yields fT/fMAX of 70/163 GHz. The passivated devices show retain a stable ID,max under repeated measurements and an off-state breakdown of 18.5 V at Lgd = 400 nm. These results highlight the promise of MOCVD-grown AlScN/GaN multi-channel HEMTs for RF applications, with strong DC and small-signal RF characteristics, motivating further study of its large-signal performance for mm-wave operation.