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  4. Interfacial structure of anodically oxidized Hg(1-x) Cd(x) Te
 
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1987
Conference Paper
Title

Interfacial structure of anodically oxidized Hg(1-x) Cd(x) Te

Other Title
Struktur der Phasengrenze zwischen Hg(1-x) Cd(x) Te und seinem anodischen Eigenoxid
Abstract
The formation of the compositional structure at the interface between Hgsub1minusxCdsubxTe(MCT) and its common anodic oxide was investigated by electrochemical and XPS analyses. It was found that a bi-modal oxidation behaviour of MCT causes each of both interface regions (oxide and MCT) to deviate in its composition from the respective bulk.
Author(s)
Richter, H.J.
Seelmann-Eggebert, M.
Mainwork
18th International Conference on the Physics of Semiconductors 1986  
Conference
International Conference on the Physics of Semiconductors 1986  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Anodisches Eigenoxid

  • Chemische Phasengrenzstruktur

  • Passivierung

  • Quecksilber-Tellurid

  • Röntgen-Photoelektronen-Spektroskopie

  • Voltametrie

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