Effects of dielectric barrier discharge treatment on the surface of silicon wafers

The impact of an atmospheric-pressure dielectric barrier discharge (DBD) in oxygen on the chemistry and morphology of silicon wafer surfaces was investigated. We found the plasma to have an oxidizing effect in the case of H-terminated and native oxide covered silicon surfaces, respectively. The properties of the modified oxide surface are beneficial for the application of low temperature wafer bonding, since it is porous, strongly hydrated, and surface roughness is virtually not affected.