Hermeticity of SI1-XGeX diaphragms for the fabrication of a capacitive post-CMOS pressure sensor

In this work, the hermeticity of diaphragm structures is investigated and optimized. The diaphragms are developed for the monolithic post-CMOS integration of capacitive pressure sensors. Si1-XGeX is used as diaphragm material and was deposited at temperatures below 400 °C. The hermeticity of the diaphragms was evaluated at a He pressure of 1800 hPa and in a temperature range from 50 °C to about 100 °C. The diffusion coefficients were determined by measuring the changes of diaphragm deflections due to He-diffusion inside the cavity. In the CVD process of Si1-XGeX cover layer on a polycrystalline p+Si1-XGeX diaphragm for closing the etch access holes, a variation of the SiH4 and GeH4 gas flows at a substrate temperature of about 380 °C was investigated regarding the selectivity of the layer growth on different surfaces (p+Si1-XGeX, Si, and SiO2). The selectivity of the layer growth against Si and SiO2 increases with the GeH4 ratio in the process gas flow. With a pure GeH4 gas flow, an optimisation of the parameters selectivity, He-diffusion and intrinsic stress of the Si1-XGeX cover layer was found.