Investigation of the Gate Dimension Influences on Performance and Reliability of Silicon-Doped Hafnium Oxide (HSO) FeFETs

This paper investigates the influence of gate Length and Width on Ferroelectric Field-Effect Transistors with 10 nm and 5 nm ferroelectric HSO. An equivalent Length and Width dependence was shown for gate breakdown voltage and memory window, while a noticeably stronger dependence on Length and Width was shown for endurance and read-after-write, respectively. A thicker HSO layer demonstrated a superior gate breakdown and memory window, while a thinner one had a faster relaxation after the Write pulse.