Cathodoluminescence study of erbium in La1-xErxF3 epitaxial layers on Si-111-.

Erbium-substituted La1-xErxF3 lanthanum trifluoride epitaxial layers have been grown on Si (111) substrates by molecular beam epitaxy (MBE). Strong near-infrared luminescence, peaked at 1.54 mym, was observed from such films under electron beam excitation. This cathodoluminescence arises from the intra-4f-shell transitions. The infrared spectra reveal that MBE-grown LaF3 layers on Si (111) crystallize in the hexagonal tysonite structure, typical for bulk LaF3 single crystals.