2007
Conference Paper
Title

III/V wafer bonding technology for wafer-level fabrication of GaInAsP/InP microring resonators

Abstract
GaInAsP/InP passive microring resonator devices were successfully fabricated using a vertical integration concept with GaInAsP/InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication.
Author(s)
Dragoi, V.
Mittendorfer, G.
Thanner, C.
Lindner, P.
Alexe, M.
Pintilie, L.
Hamacher, M.
Heidrich, H.
Mainwork
Conference
DOI
Language
English