Evaluation of defect densities on LP-MOVPE grown InGaAsP in dependence of InP substrate type

Although an assessment of growth defects appears to be a very complex matter due to the various growth and substrate parameters and the statistics involved this study has shown that the substrate orientation has a major impact on the type and density of surface growth defects. The dopant type of the substrate has the main effect on the EPD and, along with this, on the growth defect density, but no effect on the defect type.