An Embedded Power Section with GaN HEMTs

This paper investigates the option to use the printed circuit board embedding technology for commercial 650V GaN-on-Si power devices. Embedding the power section, including the phase-leg of transistors, control circuitry like driver ICs and the dc-link capacitor is a promising approach to realize a low inductive and high power density system. The necessary methods and processes as well as the design of a power section using GaN HEMTs for a three-phase drive inverter with a nominal power in the low kW range in an embedded and a conventional assembly are discussed and the electrical characteristics are studied in hard-switched mode.