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  4. Broadband interconnect design for silicon-based system-in-package applications up to 170 GHz
 
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2013
Conference Paper
Title

Broadband interconnect design for silicon-based system-in-package applications up to 170 GHz

Abstract
This paper presents the design of vertical chip-to-chip interconnects for mm-wave system-in-package (SiP) applications up to 170 GHz. Solid and liquid type polymer materials are used as the interlayer dielectric on the structured Si-wafers to realize coplanar waveguide (CPW) interconnects. Coplanar transmission lines fabricated on high- and low-resistivity silicon substrates are tested and their characteristics are compared, as well. The interconnect structures show excellent electrical performance from DC up to 170 GHz with an insertion loss of 0.6 dB per transition at 170 GHz.
Author(s)
Topak, E.
Choi, J.-Y.
Merkle, T.
Koch, S.
Saito, S.
Landesberger, C.
Faul, R.
Bock, K.
Mainwork
43rd European Microwave Conference, EuMC 2013. Proceedings  
Conference
European Microwave Conference (EuMC) 2013  
European Microwave Week (EuMW) 2013  
Language
English
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
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