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2009
Conference Paper
Title

Integrated active sensors for near-field scanning

Abstract
This paper describes the design, simulation and measurement of integrated active sensors in OMMIC ED02AH GaAs technology for near-field scanning. Electromagnetic field simulation and on-wafer measurement have been performed for the miniature integrated sensors (loop and dipole). Two wideband amplifiers with a gain of 22 dB and 28 dB respectively and a bandwidth of about 10 GHz are designed and measurement results are presented. Finally, frequency responses of the active sensors are reported.
Author(s)
Uddin, N.
Spang, M.
Mager, T.
Thiede, A.
Mainwork
ISTET 2009. Proceedings. CD-ROM  
Conference
International Symposium on Theoretical Electrical Engineering (ISTET) 2009  
Language
English
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
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