Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth

Redistribution of Mn and Be doping profiles during growth of MBE GaInAs have been analyzed by SIMS and CV-measurements. Contribution of diffusion in the homomaterial, diffusion across the heterointerface, and surface accumulation are clearly detected. The doping concentration related to the onset of the effects observed is in good agreement with the onset of surface roughening. Diffusion and accumulation are more pronounced in the case of Mn doping.