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  4. Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
 
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1996
Conference Paper
Title

Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture

Abstract
An InP-based photoreceiver OEIC with a bandwidth of 27 GHz is reported. The device consists of a pin-photodiode with integrated optical waveguide and a coplanar travelling wave amplifier being composed of four HEMTs.
Author(s)
Bach, H.-G.
Umbach, A.
Unterborsch, G.
Passenberg, W.
Mekonnen, G.G.
Schlaak, W.
Schramm, C.
Ebert, W.
Wolfram, P.
Waasen, S. van
Bertenburg, R.M.
Janssen, G.
Reuter, R.
Auer, U.
Tegude, F.-J.
Mainwork
22nd European Conference on Optical Communication 1996. Vol.1: Regular and invited papers  
Conference
European Conference on Optical Communication (ECOC) 1996  
European Exhibition on Optical Communication (EEOC) 1996  
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • aluminium compounds

  • gallium arsenide

  • HEMT integrated circuits

  • iii-v semiconductors

  • indium compounds

  • integrated optics

  • integrated optoelectronics

  • optical receivers

  • optical waveguides

  • p-i-n photodiodes

  • time division multiplexing

  • ultrafast GaInAs/AlInAs/InP photoreceiver

  • waveguide architecture

  • InP-based photoreceiver oeic

  • bandwidth

  • pin-photodiode

  • integrated optical waveguide

  • coplanar travelling wave amplifier

  • HEMT ics

  • 27 GHz

  • inp

  • GaInAs-AlInAs-InP

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