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1996
Conference Paper
Title
Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
Abstract
An InP-based photoreceiver OEIC with a bandwidth of 27 GHz is reported. The device consists of a pin-photodiode with integrated optical waveguide and a coplanar travelling wave amplifier being composed of four HEMTs.
Language
English
Keyword(s)
aluminium compounds
gallium arsenide
HEMT integrated circuits
iii-v semiconductors
indium compounds
integrated optics
integrated optoelectronics
optical receivers
optical waveguides
p-i-n photodiodes
time division multiplexing
ultrafast GaInAs/AlInAs/InP photoreceiver
waveguide architecture
InP-based photoreceiver oeic
bandwidth
pin-photodiode
integrated optical waveguide
coplanar travelling wave amplifier
HEMT ics
27 GHz
inp
GaInAs-AlInAs-InP