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  4. High-brightness quantum well and quantum dot tapered lasers
 
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2008
Conference Paper
Title

High-brightness quantum well and quantum dot tapered lasers

Other Title
Hochbrilliante Quantenfilm- und Quantenpunktlaser
Abstract
Several types of high-brightness near-infrared tapered quantum well and quantum dots tapered lasers are reviewed and compared. Recent developments include record-high brightness quantum well tapered lasers at 810 nm and 975 nm (up to 8.3 W CW, diffraction limited), high wall-plug efficiency gain-guided and index-guided tapered lasers (up to 57%), narrow slow axis far-field (2.5° FWHM) index-guided tapered lasers at 975 nm, wavelength-stable (down to 0.09 nm/K), high-brightness quantum dots tapered lasers at 920 and 975 nm, and quantum dots tapered lasers bars (up to 14 W CW) at 920 nm, with narrow far-field in the slow axis (3° FWHM).
Author(s)
Michel, N.
Krakowski, M.
Hassiaoui, I.
Calligaro, M.
Lecomte, M.
Parillaud, O.
Weinmann, P.
Zimmermann, C.
Kaiser, W.
Kamp, M.
Forchel, A.
Pavelescu, E.-M.
Reithmaier, J.-P.
Sumpf, B.
Erbert, G.
Kelemen, M.
Ostendorf, Ralf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
García-Tijero, J.-M.
Odriozola, H.
Esquivias, I.
Mainwork
Novel in-plane semiconductor lasers VII  
Conference
Conference "Novel In-Plane Semiconductor Lasers" 2008  
DOI
10.1117/12.787115
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • high brightness

  • hohe Brillianz

  • high power

  • hohe Leistung

  • diode laser

  • Diodenlaser

  • semiconductor laser

  • Halbleiterlaser

  • tapered laser

  • Trapezlaser

  • AlGaAs-InGaAs

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