Conductivity mobility and hall mobility in compensated multicrystalline silicon

The knowledge of the majority carrier mobility in silicon as a function of dopant density is of utmost importance for a correct quantitative evaluation of a variety of lifetime measurements. However, only for monocrystalline silicon doped with either boron (concentration NA) or phosphorus (concentration ND), sufficient reliable experimental data exists as well as good models. In the presence of both dopants, in so called compensated silicon, a reduced mobility is expected. It seems that the model of Klaassen provides acceptable values for the mobility in lowly compensated monocrystalline silicon as a function of NA + ND [1]. For more strongly compensated monocrystalline silicon and for multicrystalline silicon, it is not sure if this model is still applicable. In this contribution, the conductivity mobility of majority carrier holes as well as the Hall mobility in compensated and non-compensated multicrystalline (mc) p-type silicon is investigated and compared with the established mobility models as well as with the data from monocrystalline silicon.