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  4. InP DHBT technology for 100 Gbit/s applications
 
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2008
Conference Paper
Title

InP DHBT technology for 100 Gbit/s applications

Other Title
InP-DHBT-Technologie für 100-Gbit/s-Anwendungen
Abstract
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The MBE grown InP-based DHBTs with an emitter area of 1 × 4 µm2 exhibited peak cutoff frequencies (fT and fMAX) > 300 GHz, and a breakdown voltage (BVCEo) of ~ 5 V. The potential of this technology has been first assessed by the realization of a voltage controlled oscillator (VCO), exhibiting a high output power and a large tuning range. Subsequently, a demultiplexer (DEMUX) suitable for 100 Gbit/s fibre optical links, has been successfully fabricated and operated up to 110 Gbit/s.
Author(s)
Driad, Rachid  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Makon, R.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Benkhelifa, Fouad  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lösch, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
International Conference on Compound Semiconductor Manufacturing Technology 2008. Digest of papers  
Conference
International Conference on Compound Semiconductor Manufacturing Technology  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • InP

  • InP-DHBT

  • 100 Gbit/s

  • VCO

  • demultiplexer

  • DEMUX

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