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  4. New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs
 
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1986
Journal Article
Title

New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs

Abstract
Electron paramagnetic resonance studies on as-grown semi-insulating liquid encapsulation Czochralski (LEC) GaAs at 35 GHz have revealed a new resonance labeled FR3. It is consistently present in LEC material but usually unobservable in Bridgman samples, thus strongly indicating that the defect involved contains boron. The center has trigonal symmetry and is electrically active. Its spectrum indicates a d(up9) or p(up5) one-hole configuration. We tentatively identify FR3 with a Ga antisite complex, Ga(down As)(up-)-B(up0)(down Ga). (IAF)
Author(s)
Baeumler, Martina  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wilkening, W.
Kaufmann, U.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Windscheif, J.
Journal
Applied Physics Letters  
DOI
10.1063/1.97378
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Elektronenspinresonanz

  • Galliumarsenid

  • Punktdefekt

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