Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE

Recent significant improvements in Ga(NAsP)/GaP quantum well lasers grown by metal organic vapour phase epitaxy on a GaP substrate are reported. At room temperature, the devices show a threshold current density of 4.0 kAcm(-2) at a lasing wavelength of 981 nm for a cavity length of 1 mm and a characteristic temperature of 58 K in the temperature region of 220-295 K. These improvements further verify the possible application for the novel III/V Ga(NAsP)/GaP material system to integrate long-term stable laser diodes in a standard CMOS-compatible electronic chip.