Doping- and carrier concentration profile characterisation of highly phosphorus-doped emitters

In this work we use Secondary Ion Mass Spectrometry (SIMS), Spreading Resistance Analysis (SRA), Stripping Hall (SH) and Electrochemical Capacitance Voltage (ECV) measurements to analyse different phosphorus-diffused emitters. Such data permit the detailed characterisation of the emitter and facilitate an optimisation of the diffusion process. The measurement techniques provide depth resolved information about the phosphorus concentration and the conductivity as well as the electron concentration and mobility. We include an overview of the different measurement techniques. A comparison of the obtained profiles confirms the presence of electrically inactive phosphorus and demonstrates differences in the surface concentration and the p-n-junction depth, which can be mainly attributed to measurement artefacts. However, a good agreement of all techniques is found.