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  4. Investigation of the ammonia sensitivity of different MOS-transistors
 
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1987
Conference Paper
Title

Investigation of the ammonia sensitivity of different MOS-transistors

Abstract
A split gate and a very thin Pt and Pd metal gate MOS-Transistor as an ammonia sensor was developed and investigated. These transistors showed a good ammonia sensitivity. (IMS)
Author(s)
Dobos, K.
Zimmer, G.
Mainwork
Transducers '87. 4th International Conference on Solid-State Sensors and Actuators. Digest of technical papers  
Conference
International Conference on Solid-State Sensors and Actuators 1987  
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
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